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Mobility model for advanced SOI-MOSFETs including back-gate contribution by Zenitani, Hiroshi; Kikuchihara, Hideyuki; Feldmann, Uwe; Miyamoto, Hidenori; Mattausch, Hans Jürgen; Miura-Mattausch, Michiko; Nakagawa, Tadashi; Sugii, Nobuyuki is a Engineering article available to read on EtoBox.

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Author
Zenitani, Hiroshi; Kikuchihara, Hideyuki; Feldmann, Uwe; Miyamoto, Hidenori; Mattausch, Hans Jürgen; Miura-Mattausch, Michiko; Nakagawa, Tadashi; Sugii, Nobuyuki
Publisher
Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
Published
2015
Field
Engineering (Physical Sciences)

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Browse all works by Zenitani, Hiroshi; Kikuchihara, Hideyuki; Feldmann, Uwe; Miyamoto, Hidenori; Mattausch, Hans Jürgen; Miura-Mattausch, Michiko; Nakagawa, Tadashi; Sugii, Nobuyuki