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Can I read Post-annealing treatment in improving high dielectric constant MgO-based metal-oxide-semiconductor diodes on EtoBox?
Post-annealing treatment in improving high dielectric constant MgO-based metal-oxide-semiconductor diodes by J. D. Hwang; Chin-Yang Chang is a Engineering article available to read on EtoBox.
What is Post-annealing treatment in improving high dielectric constant MgO-based metal-oxide-semiconductor diodes about?
Metal-oxide-semiconductor (MOS) diodes with a high dielectric constant magnesium-oxide (MgO) insulating layer were fabricated using a magnetron radio frequency sputtering system. MgO has a high dielectric constant of approximately 11.2, which is three times higher than the dielectric constant (3.9) of silicon dioxide (SiO2), thereby ensuring a three times thicker gate oxide and reducing gate leakage current while maintaining the same capacitance density. Post-annealing treatment was employed on the MgO film to study how annealing treatment affects the electrical characteristics of MOS diodes. It was observed that the post-annealing treatment of MgO effectively diminished the gate leakage current by approximately one order, thereby increasing the rectification ratio from 8.5 × 103 to 6.8 × 104 for the MOS diodes with as-deposited and post-annealed MgO. In contrast to the MOS diodes with as-deposited MgO, the post-annealing treatment of MgO significantly decreased the flatband voltage shift from 7.8 to 1.3 V and reduced the fixed oxide charge density from 1.3 × 1012 to 2.3 × 1011 cm−2; also, the interface trap charge density was suppressed from 1.8 × 1013 to 3.2 × 1012 cm−2 eV−1. Lar
Who reads Post-annealing treatment in improving high dielectric constant MgO-based metal-oxide-semiconductor diodes?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- J. D. Hwang; Chin-Yang Chang
- Publisher
- AIP Publishing
- Published
- 2022
- Language
- EN
- Field
- Engineering (Physical Sciences)