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Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping by J.Z. Li; J. Bai; J.M. Hydrick; J.S. Park; C. Major; M. Carroll; J.G. Fiorenza; A. Lochtefeld is a Engineering article available to read on EtoBox.
What is Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping about?
Epitaxial GaAs layers have been deposited on polished Ge film grown on exactly (0 0 1) oriented Si substrate by metal-organic chemical vapor deposition (MOCVD) via aspect ratio trapping (ART) method. Double-crystal X-ray diffraction shows that the full-width at half-maximum (FWHM) of the (4 0 0) reflection obtained from 1 mm GaAs is 140 arcsec. Scanning electron microscopy (SEM) of the GaAs layer surface shows that the amount of antiphase domain defects (APD) raised from GaAs/Ge interface using Ge ART on Si is dramatically reduced compared to GaAs layers grown on exact (0 0 1) Ge substrate. Defect reduction and Ge diffusion at vicinal GaAs/Ge interface were investigated via cross-section transmission electron microscopy (X-TEM) and secondary ion mass spectrometry (SIMS). Film morphology and optical properties were evaluated via SEM and room temperature photoluminescence (PL).
Who reads Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- J.Z. Li; J. Bai; J.M. Hydrick; J.S. Park; C. Major; M. Carroll; J.G. Fiorenza; A. Lochtefeld
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2009
- Language
- EN
- Field
- Engineering (Physical Sciences)