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This paper investigates the temperature reliability of the Doping Less Tunnel Field Effect Transistor (DL-TFET) focusing on its RF performance metrics and linearity across a temperature range of 240 to 360 Kelvin. The study utilizes the ATLAS simulation tool to analyze various parameters such as transconductance and output conductance, highlighting the impact of temperature on device characteristics and linearity. The findings aim to enhance the understanding of DL-TFET performance in modern electronic appl

Author

gorgeouskhushi1992

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EN