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Characterisation of deep level trap centres in 6H-SiC p-n junction diodes by K. Ghaffour; V. Lauer; A. Souifi; G. Guillot; C. Raynaud; S. Ortolland; M.L. Iocatelli; J.P. Chante is a Materials Science article available to read on EtoBox.

What is Characterisation of deep level trap centres in 6H-SiC p-n junction diodes about?

Deep level transient spectroscopy (DLTS) measurements were performed on silicon carbide (6H-SiC) n + p -p + junction diodes in order to compare the electrical properties and quality of epitaxial layers in the implanted and the epitaxial emitter diodes, where the p -p + layers are the same. Four hole trap centres were detected on the implanted emitter diodes. Their thermal activation energy's are 0.49, 0.6, 0.7 and 0.87 eV, respectively, referred to the valence band. The last three trap centres are also observed on the epitaxial emitter diodes. The origin of deep levels, with E a = 0.7 and 0.87 eV, is still under investigation. The thermal activation energy and capture cross section (0.6 eV, 4.3× 10 -15 cm 2 ) is in good agreement with values reported for the boron-related D-centre. The trap centre with E a =0.49 eV is associated to the ion-implantation process of the n + layer. Double deep level transient spectroscopy measurements (DDLTS) have been performed to accurately profile this last defect through the depletion region. Its trap concentration N T (x) as a function of the depletion region width indicates that this defect is located near the n + /p -junction.

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Author

K. Ghaffour; V. Lauer; A. Souifi; G. Guillot; C. Raynaud; S. Ortolland; M.L. Iocatelli; J.P. Chante

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0921-5107)

Published

1999

Language

EN

Field

Materials Science (Physical Sciences)