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Physical Device Modeling of CdTe Ultrathin Film Solar Cells by maps6584 is a document available to read on EtoBox.

This document presents a physical device modeling study of CdS/CdTe ultrathin film solar cells (UTF-SCs) using the Sah–Noyce–Shockley (SNS) theory to analyze generation and recombination in the space charge region of an asymmetric pn+ junction. Key parameters such as uncompensated defect density, recombination lifetime, and CdTe thickness are shown to significantly affect the current-voltage characteristics and quantum efficiency of UTF devices. The findings emphasize the importance of measuring electrical

Author
maps6584
Language
EN