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Can I read VPE growth of InGaAS/InP structures using the hydride system on EtoBox?
VPE growth of InGaAS/InP structures using the hydride system by Dr. B. Diegner; T. Eberle; K. Jacobs is a Materials Science article available to read on EtoBox.
What is VPE growth of InGaAS/InP structures using the hydride system about?
## the Hydride System Some results on the VPE growth of InGaAslInP structures in the hydride system using a single chamber horizontal reactor are described. The effect of partial pressures of the reactant gases and bypass-HC1 on epitaxial growth of InGaAs is discussed. The GaCl partial pressure was found to be the deciding growth parameter. E s werden einige Resultate der VPE-Zuchtung von InGaAs/InP-Strukturen im Hydridsystem unter Verwendung eines Einkammer-Horizontalreaktors beschrieben. Der EinfluR der Partialdrucke von Reaktionsgasen und Bypass-HC1 auf das epitaxiale Wachstum von InGaAs wird diskut,iert. Als entscheidender Wachstumsparameter erwies sich der GaC1-Partialdruck.
Who reads VPE growth of InGaAS/InP structures using the hydride system?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Dr. B. Diegner; T. Eberle; K. Jacobs
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 0232-1300)
- Published
- 1989
- Language
- EN
- Field
- Materials Science (Physical Sciences)