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Slow-trap profiling of NO and N2O nitrided oxides grown on Si and SiC substrates by Sima Dimitrijev; Philip Tanner; H.Barry Harrison is a Engineering article available to read on EtoBox.

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In this paper, we demonstrate the unique ability of a newly developed slow-trap pro®ling technique to characterise silicon-based MOS capacitors in strong inversion. We also demonstrate the applicability of the slowtrap pro®ling technique for the characterisation of oxides grown on SiC. The obtained slow-trap pro®les show that NO nitridation eliminates while N 2 O creates defects acting as slow traps in the case of both Si and SiC substrates. The corresponding eects of nitridation on interface traps and ®xed oxide charge are also discussed.

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Author

Sima Dimitrijev; Philip Tanner; H.Barry Harrison

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)

Published

1999

Language

EN

Field

Engineering (Physical Sciences)