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Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy by Smorchkova, I. P.; Haus, E.; Heying, B.; Kozodoy, P.; Fini, P.; Ibbetson, J. P.; Keller, S.; DenBaars, S. P.; Speck, J. S.; Mishra, U. K. is a Engineering article available to read on EtoBox.

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Author
Smorchkova, I. P.; Haus, E.; Heying, B.; Kozodoy, P.; Fini, P.; Ibbetson, J. P.; Keller, S.; DenBaars, S. P.; Speck, J. S.; Mishra, U. K.
Publisher
American Institute of Physics; AIP Publishing (ISSN 0003-6951)
Published
2000
Language
EN
Field
Engineering (Physical Sciences)

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Browse all works by Smorchkova, I. P.; Haus, E.; Heying, B.; Kozodoy, P.; Fini, P.; Ibbetson, J. P.; Keller, S.; DenBaars, S. P.; Speck, J. S.; Mishra, U. K.