Opening book details…
About this Engineering article
Origin of resistive-switching behaviors of chemical solution deposition-derived BiFeO 3 thin-film memristors by Yang, Feng; Liu, Fen; Ji, Fengqi; Lin, Yanling; Tang, Minghua is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Yang, Feng; Liu, Fen; Ji, Fengqi; Lin, Yanling; Tang, Minghua
- Publisher
- Royal Society of Chemistry (RSC) (ISSN 2633-5409)
- Published
- 2020
- Field
- Engineering (Physical Sciences)
More by Yang, Feng; Liu, Fen; Ji, Fengqi; Lin, Yanling; Tang, Minghua
Browse all works by Yang, Feng; Liu, Fen; Ji, Fengqi; Lin, Yanling; Tang, Minghua