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About this Materials Science article
The Effect of Annealing Ambient on the Characteristics of an Indium–Gallium–Zinc Oxide Thin Film Transistor by Park, Soyeon (author);Bang, Seokhwan (author);Lee, Seungjun (author);Park, Joohyun (author);Ko, Youngbin (author);Jeon, Hyeongtag (author) is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Park, Soyeon (author);Bang, Seokhwan (author);Lee, Seungjun (author);Park, Joohyun (author);Ko, Youngbin (author);Jeon, Hyeongtag (author)
- Publisher
- American Scientific Publishers (ISSN 1533-4880)
- Published
- 2011
- Field
- Materials Science (Physical Sciences)