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About this Engineering article
Analysis of Origin of Nonlinear Gain in 1.5 μM Semiconductor Active Layers by Highly Nondegenerate Four-wave Mixing by Kikuchi, K.; Amano, M.; Zah, C. E.; Lee, T. P. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Kikuchi, K.; Amano, M.; Zah, C. E.; Lee, T. P.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1994
- Field
- Engineering (Physical Sciences)
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