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between the spin density and the linewidth is found out for undoped samples suggesting that the localized states are uniformly annealed out up to 1050C in spite of the crystallization of the samples at 700 ~ 800~C. The spin density also decreases with an increase of doping ratio, but the linewidth remains constant. For a heavily doped sample, a new signal with g = 2.0043 is observed, and suggested to be due to localized states associated with incorporated phosphorus atoms. llighly insulating silicon nitride films FATEtt MOHAMMAD NAZAR Int. J. Electron. 46, (I) 57 (1979). Highly insulating silicon nitride films are obtained when the nitride is deposited on silicon wafers coated with tungsten. Current conduction in these films follows a high power law of the form 1 oc V" with values of n greater than 10, as compared to silicon nitride films deposited on silicon which give log I-V"" behaviour. C-V curves and infra-red absorption measurements indicate that in the tungsten-coated samples, either the tungsten layer has disappeared during the deposition process and has been incorporated in the nitride and "doped" it in the process, or the tungsten layer might be in the island (three-dimen

Who reads Characterisation of I2L gates: H. E. J. Wulms Microelectron. J. 9, (2) 4 (1978)?

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0026-2692)

Published

1980

Language

EN

Field

Engineering (Physical Sciences)