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About this Engineering article
1.48 MV⋅cmˉ¹/0.2 mΩ⋅cm² GaN Quasi-Vertical Schottky Diode via Oxygen Plasma Termination by Bian, Zhaoke; Zhang, Jincheng; Zhao, Shenglei; Zhang, Yachao; Duan, Xiaoling; Chen, Jiabo; Ning, Jing; Hao, Yue is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Bian, Zhaoke; Zhang, Jincheng; Zhao, Shenglei; Zhang, Yachao; Duan, Xiaoling; Chen, Jiabo; Ning, Jing; Hao, Yue
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2020
- Field
- Engineering (Physical Sciences)