About this scholarly article

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications - 600 V GaN HEMT on 6-inch Si substrate using Au-free Si-LSI process for power applications by Kikkawa, Toshihide; Hosoda, Tsutomu; Akiyama, Shinichi; Kotani, Yoshiyuki; Wakabayashi, Toshihiro; Ogino, Tsutomu; Imanishi, Kenji; Mochizuki, Akitoshi; Itabashi, Kazuo; Shono, Ken; Asai, Yoshimori; Joshin, Kazukiyo; Ohki, Toshihiro; Kanamura, Masahito; Nishimori, Masato; Imada, Tadahiro; Kotani, Junji; Yamada, Atsushi; Nakamura, Norikazu; Hirose, Tatsuya; Watanabe, Keiji is a scholarly article available to read on EtoBox.

Author

Kikkawa, Toshihide; Hosoda, Tsutomu; Akiyama, Shinichi; Kotani, Yoshiyuki; Wakabayashi, Toshihiro; Ogino, Tsutomu; Imanishi, Kenji; Mochizuki, Akitoshi; Itabashi, Kazuo; Shono, Ken; Asai, Yoshimori; Joshin, Kazukiyo; Ohki, Toshihiro; Kanamura, Masahito; Nishimori, Masato; Imada, Tadahiro; Kotani, Junji; Yamada, Atsushi; Nakamura, Norikazu; Hirose, Tatsuya; Watanabe, Keiji

Publisher

IEEE

Published

2013

Language

EN