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About this Engineering article
Near-field scanning microscopy and physico-chemical analysis versus time of SiCN:H thin films grown in Ar/NH3/TMS gas mixture using MW-Plasma CVD at 400 °C by Plujat, Béatrice; Glénat, Hervé; Hamon, Jonathan; Gazal, Yoan; Goullet, Antoine; Hernandez, Emmanuel; Quoizola, Sébastien; Thomas, Laurent is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Plujat, Béatrice; Glénat, Hervé; Hamon, Jonathan; Gazal, Yoan; Goullet, Antoine; Hernandez, Emmanuel; Quoizola, Sébastien; Thomas, Laurent
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1612-8850)
- Published
- 2018
- Language
- EN
- Field
- Engineering (Physical Sciences)