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This document discusses the potential of 2-D antimonene as a solution to extend the scaling limits of p-MOSFETs, particularly as channel lengths shrink below 5 nm. The study highlights that applying biaxial tensile strain can significantly enhance the electronic properties of antimonene, resulting in improved performance metrics such as reduced OFF-current and increased ON-current. The findings suggest that antimonene could play a crucial role in the development of next-generation energy-efficient electroni

Author

pranto.eee.buet

Language

EN