About this scholarly article

2009 IEEE International Electron Devices Meeting (IEDM) - GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate by Uemoto, Yasuhiro; Morita, Tatsuo; Ikoshi, Ayanori; Umeda, Hidekazu; Matsuo, Hisayoshi; Shimizu, Jun; Hikita, Masahiro; Yanagihara, Manabu; Ueda, Tetsuzo; Tanaka, Tsuyoshi; Ueda, Daisuke is a scholarly article available to read on EtoBox.

Author

Uemoto, Yasuhiro; Morita, Tatsuo; Ikoshi, Ayanori; Umeda, Hidekazu; Matsuo, Hisayoshi; Shimizu, Jun; Hikita, Masahiro; Yanagihara, Manabu; Ueda, Tetsuzo; Tanaka, Tsuyoshi; Ueda, Daisuke

Publisher

IEEE

Published

2009

Language

EN