About this scholarly article

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) - The effect of nitrogen incorporation into the gate oxide by using shallow implantation of nitrogen and drive-in process by Lian-Hoon Ko, ; Byung-Jin Cho, ; Yiang-Aun Nga, ; Lap-Hung Chan, is a scholarly article available to read on EtoBox.

Author

Lian-Hoon Ko, ; Byung-Jin Cho, ; Yiang-Aun Nga, ; Lap-Hung Chan,

Publisher

IEEE

Published

1998

Language

EN