About this scholarly article

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) - A comparison of low-frequency noise characteristics of silicon homojunction and III-V heterojunction bipolar transistors by Kirtania, A.K.; Das, M.B.; Chandrasekhar, S.; Lunardi, L.M.; Hamm, R.A.; Yang, L.W. is a scholarly article available to read on EtoBox.

Author

Kirtania, A.K.; Das, M.B.; Chandrasekhar, S.; Lunardi, L.M.; Hamm, R.A.; Yang, L.W.

Publisher

IEEE

Published

1994

Language

EN