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Two-dimensional analysis of cutoff frequencies of GaAs MESFETS with various substrate conditions (invited article) by Kazushige Horio is a Engineering article available to read on EtoBox.

What is Two-dimensional analysis of cutoff frequencies of GaAs MESFETS with various substrate conditions (invited article) about?

## Abstract Cutoff frequencies of GaAs MESFETs are simulated by using a model that considers impurity compensation by deep levels in the semi‐insulating (SI) substrate. For a higher acceptor density SI substrate, an achievable cutoff frequency becomes higher because the substrate current becomes smaller. Effects of introducing a p‐buffer layer are also studied in terms of dependencies on p‐layer thickness and its doping density. © 1993 John Wiley & Sons, Inc.

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Author
Kazushige Horio
Publisher
John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Inc.; Wiley (ISSN 1050-1827)
Published
1993
Language
EN
Field
Engineering (Physical Sciences)

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