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Bridgman Growth Technique for GaAs by Austin Lane is a document available to read on EtoBox.
The horizontal Bridgman technique is used to grow gallium arsenide (GaAs) semiconductor crystals. It involves melting a GaAs precursor in a quartz boat within a quartz ampoule surrounded by a furnace. A solid arsenic region is kept at 618°C to maintain a stoichiometric ratio as the crystal grows. The furnace is slowly moved to initiate crystal growth as the seed crystal cools and crystallizes GaAs. Compared to Czochralski growth, Bridgman growth produces crystals with fewer dislocations but interactions bet
- Author
- Austin Lane
- Language
- EN