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High-Density Positive Passivation for GaN by A Mohan Babu is a document available to read on EtoBox.
This document describes research on improving gallium nitride metal-insulator-semiconductor high electron mobility transistors (GaN MIS-HEMTs) through effective passivation. It discusses how positive fixed charges in the passivation layer can help reduce current collapse in GaN power devices by reducing the surface potential of the aluminum gallium nitride (AlGaN) layer and expanding the quantum well. Specifically, the researchers demonstrate using silicon oxynitride (SiON) for passivation due to its high d
- Author
- A Mohan Babu
- Language
- EN