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About this scholarly article
2012 International Electron Devices Meeting - Study of piezoresistive properties of advanced CMOS transistors: Thin film SOI, SiGe/SOI, unstrained and strained Tri-Gate Nanowires by Casse, M.; Barraud, S.; Le Royer, C.; Koyama, M.; Coquand, R.; Blachier, D.; Andrieu, F.; Ghibaudo, G.; Faynot, O.; Poiroux, T.; Reimbold, G. is a scholarly article available to read on EtoBox.
- Author
- Casse, M.; Barraud, S.; Le Royer, C.; Koyama, M.; Coquand, R.; Blachier, D.; Andrieu, F.; Ghibaudo, G.; Faynot, O.; Poiroux, T.; Reimbold, G.
- Publisher
- IEEE
- Published
- 2012
- Language
- EN