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Can I read Nanometer‐Thick Single‐Crystal Hexagonal Gd~2~O~3~ on GaN for Advanced Complementary Metal‐Oxide‐Semiconductor Technology on EtoBox?
Nanometer‐Thick Single‐Crystal Hexagonal Gd~2~O~3~ on GaN for Advanced Complementary Metal‐Oxide‐Semiconductor Technology by Wen Hsin Chang; Chih Hsun Lee; Yao Chung Chang; Pen Chang; Mao Lin Huang; Yi Jun Lee; Chia‐Hung Hsu; J. Minghuang Hong; Chiung Chi Tsai; J. Raynien Kwo; Minghwei Hong is a Engineering article available to read on EtoBox.
What is Nanometer‐Thick Single‐Crystal Hexagonal Gd~2~O~3~ on GaN for Advanced Complementary Metal‐Oxide‐Semiconductor Technology about?
Hexagonal-phase single-crystal Gd2 O3 is deposited on GaN in a molecular beam epitaxy system. The dielectric constant is about twice that of its cubic counterpart when deposited on InGaAs or Si. The capacitive effective thickness of 0.5 nm in hexagonal Gd2 O3 is perhaps the lowest on GaN-metal-oxide-semiconductor devices. The heterostructure is thermo dynamically stable at high temperatures and exhibits low interfacial densities of states after high-temperature annealing.
Who reads Nanometer‐Thick Single‐Crystal Hexagonal Gd~2~O~3~ on GaN for Advanced Complementary Metal‐Oxide‐Semiconductor Technology?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Wen Hsin Chang; Chih Hsun Lee; Yao Chung Chang; Pen Chang; Mao Lin Huang; Yi Jun Lee; Chia‐Hung Hsu; J. Minghuang Hong; Chiung Chi Tsai; J. Raynien Kwo; Minghwei Hong
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley-Blackwell; Wiley; Research Square (ISSN 0935-9648)
- Published
- 2009
- Language
- EN
- Field
- Engineering (Physical Sciences)