About this scholarly article

2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) - 1-MHz isolated bipolar half-bridge GaN gate driver for SiC MOSFETs by Kim, Taekyun; Jang, Minsoo; Agelidis, Vassilios G. is a scholarly article available to read on EtoBox.

Author

Kim, Taekyun; Jang, Minsoo; Agelidis, Vassilios G.

Publisher

IEEE

Published

2015