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About this Materials Science article
Influence of Channel Length and High-K Oxide Thickness on Subthreshold DC Performance of Graded Channel and Gate Stack DG-MOSFETs by Adak, Sarosij; Swain, Sanjit Kumar; Dutta, Arka; Rahaman, Hafizur; Sarkar, Chandan Kumar is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Adak, Sarosij; Swain, Sanjit Kumar; Dutta, Arka; Rahaman, Hafizur; Sarkar, Chandan Kumar
- Publisher
- World Scientific Publishing Company; World Scientific ; World Scientific Publishing Co.; World Scientific Pub Co Pte Lt (ISSN 1793-2920)
- Published
- 2016
- Language
- EN
- Field
- Materials Science (Physical Sciences)