About this scholarly article

SPIE Proceedings [SPIE Photomask and NGL Mask Technology XX - Yokohama, Japan (Tuesday 16 April 2013)] Photomask and Next-Generation Lithography Mask Technology XX - A method of utilizing AIMS to quantify substrate/attenuator over-etch or under-etch during mask repair by Sargsyan, Vahagn; Olson, Kevin; Uzzel, Doug; Morgan, Jon; Ma, Mark; Tabbone, Gilles; Garetto, Anthony; Kato, Kokoro is a scholarly article available to read on EtoBox.

Author

Sargsyan, Vahagn; Olson, Kevin; Uzzel, Doug; Morgan, Jon; Ma, Mark; Tabbone, Gilles; Garetto, Anthony; Kato, Kokoro

Publisher

SPIE

Published

2013

Language

EN