Opening book details…
About this Engineering article
A Multi-band Model for the Hole Transport in Silicon at High Energies by Abramo, A; Venturi, F; Sangiorgi, E; Fiegna, C; Ricco, B; Brunetti, R; Quade, W; Jacoboni, C is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Abramo, A; Venturi, F; Sangiorgi, E; Fiegna, C; Ricco, B; Brunetti, R; Quade, W; Jacoboni, C
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0268-1242)
- Published
- 1992
- Field
- Engineering (Physical Sciences)