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Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors by Cui, Peng; Mo, Jianghui; Fu, Chen; Lv, Yuanjie; Liu, Huan; Cheng, Aijie; Luan, Chongbiao; Zhou, Yang; Dai, Gang; Lin, Zhaojun is a Biochemistry, Genetics and Molecular Biology article available to read on EtoBox.
What is Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors about?
## Abstract The AlGaN/GaN heterostructure field-effect transistors with different gate lengths were fabricated. Based on the chosen of the Hamiltonian of the system and the additional polarization charges, two methods to calculate PCF scattering by the scattering theory were presented. By comparing the measured and calculated source-drain resistances, the effect of the different gate lengths on the PCF scattering potential was confirmed.
Who reads Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors?
It is typically read by researchers, students, and practitioners in Biochemistry, Genetics and Molecular Biology.
- Author
- Cui, Peng; Mo, Jianghui; Fu, Chen; Lv, Yuanjie; Liu, Huan; Cheng, Aijie; Luan, Chongbiao; Zhou, Yang; Dai, Gang; Lin, Zhaojun
- Publisher
- Springer Science and Business Media LLC; London: Nature Publishing Group; [London]: Springer Nature; Nature Publishing Group; Society for Mining, Metallurgy and Exploration Inc.; Research Square; Springer Nature; Island Press (ISSN 2045-2322)
- Published
- 2018
- Language
- EN
- Field
- Biochemistry, Genetics and Molecular Biology (Life Sciences)