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About this Engineering article
A Deep-level Transient Spectroscopy Study of Silicon Interface States Using Different Silicon Nitride Surface Passivation Schemes by Gong, Chun; Simoen, Eddy; Posthuma, Niels; Van Kerschaver, Emmanuel; Poortmans, Jef; Mertens, Robert is a Engineering article available to read on EtoBox.
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- Author
- Gong, Chun; Simoen, Eddy; Posthuma, Niels; Van Kerschaver, Emmanuel; Poortmans, Jef; Mertens, Robert
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)