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Visualization of depletion layer in AlGaN homojunction p–n junction by Kengo Nagata; Satoshi Anada; Yoshiki Saito; Maki Kushimoto; Yoshio Honda; Tetsuya Takeuchi; Kazuo Yamamoto; Tsukasa Hirayama; Hiroshi Amano is a Engineering article available to read on EtoBox.
What is Visualization of depletion layer in AlGaN homojunction p–n junction about?
## Abstract We analyzed the p–n junction of an aluminum gallium nitride (AlGaN) homojunction tunnel junction (TJ) deep-ultraviolet light-emitting diode by phase-shifting electron holography. We clearly obtained a phase image reflecting the band alinement of the p–n homojunction and derived a depletion layer width of approximately 10 nm. In addition, the observed depletion layer width for the AlGaN TJ was in good agreement with the simulated one reflecting the diffusion profile of Mg and Si, thus enabling a discussion on the electrical conduction mechanism for an AlGaN p–n junction.
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- Author
- Kengo Nagata; Satoshi Anada; Yoshiki Saito; Maki Kushimoto; Yoshio Honda; Tetsuya Takeuchi; Kazuo Yamamoto; Tsukasa Hirayama; Hiroshi Amano
- Publisher
- IOP Publishing
- Published
- 2022
- Language
- EN
- Field
- Engineering (Physical Sciences)