About this document
GAA Nanosheet FET Simulation at 3nm by putta srikar is a document available to read on EtoBox.
The document is a project report on the simulation of Gate-All-Around (GAA) nanosheet FETs at the 3 nm technology node, submitted by students from the Institute of Aeronautical Engineering. It discusses the design, simulation, and analysis of GAA nanosheet transistors using TCAD tools, highlighting their improved performance over traditional FinFETs in terms of electrostatic control and short-channel effects. The report includes various sections such as methodology, results, and future scope, emphasizing th
- Author
- putta srikar
- Language
- EN