About this scholarly article

2009 IEEE International Reliability Physics Symposium - Why is oxide-trap charge-pumping (OTCP) method appropriate for extracting the radiation-induced traps in mosfet? by Djezzar, Boualem; Tahi, Hakim; Mokrani, Arezki is a scholarly article available to read on EtoBox.

Author

Djezzar, Boualem; Tahi, Hakim; Mokrani, Arezki

Publisher

IEEE

Published

2009