Can I read Spin Accumulation in the Extrinsic Spin Hall Effect on EtoBox?

Spin Accumulation in the Extrinsic Spin Hall Effect by Tse, Wang-Kong; Fabian, J.; Zutic, I.; Sarma, S. Das is a scholarly article available to read on EtoBox.

What is Spin Accumulation in the Extrinsic Spin Hall Effect about?

The drift-diffusion formalism for spin-polarized carrier transport in semiconductors is generalized to include spin-orbit coupling. The theory is applied to treat the extrinsic spin Hall effect using realistic boundary conditions. It is shown that carrier and spin diffusion lengths are modified by the presence of spin-orbit coupling and that spin accumulation due to the extrinsic spin Hall effect is strongly and qualitatively influenced by boundary conditions. Analytical formulas for the spin-dependent carrier recombination rates and inhomogeneous spin densities and currents are presented.

Author

Tse, Wang-Kong; Fabian, J.; Zutic, I.; Sarma, S. Das

Published

2005

Language

EN