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About this Engineering article
Model and performance of hot-electron MOS transistors for VLSI by Hoefflinger, B.; Sibbert, H.; Zimmer, G. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Hoefflinger, B.; Sibbert, H.; Zimmer, G.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 1979
- Field
- Engineering (Physical Sciences)
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