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About this Engineering article
The impact of germanium in strained Si/relaxed Si 1− x Ge x on carrier performance in non-degenerate and degenerate regimes by Kang, EngSiew; Anwar, S; Ahmadi, M T; Ismail, Razali is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Kang, EngSiew; Anwar, S; Ahmadi, M T; Ismail, Razali
- Publisher
- IOP Publishing; Institute of Physics Publishing (ISSN 1674-4926)
- Published
- 2013
- Language
- EN
- Field
- Engineering (Physical Sciences)
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