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Copper interaction with a Ta silicate surface: implications for interconnect technology by X Zhao; N.P Magtoto; M Leavy; J.A Kelber is a Engineering article available to read on EtoBox.

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The TaSiO films, ;6 A thick, were formed by sputter deposition of Ta onto ultrathin SiO substrates at 300 K, followed by 6 2 ånnealing to 600 K in 2 Torr O . X-ray photoelectron spectroscopy (XPS) measurements of the films yielded a Si(2p) binding 2 energy at 102.1 eV and Ta(4f ) binding energy at 26.2 eV, indicative of Ta silicate formation. O(1s) spectra indicate that the 7y2 film is substantially hydroxylated. Annealing the film to )900 K in ultra-high vacuum resulted in silicate decomposition to SiO and Ta O . The Ta silicate film is stable in air at 300 K. XPS data show that sputter-deposited Cu (300 K) displays 2 2 5 conformal growth on Ta silicate surface (TaSiO ) but 3D growth on the annealed and decomposed silicate surface. Initial Cuy 6 silicate interaction involves Cu charge donation to Ta surface sites, with Cu(I) formation and Ta reduction. The results are similar to those previously reported for air-exposed TaSiN, and indicate that Si-modified Ta barriers should maintain Cu wettability under oxidizing conditions for Cu interconnect applications.

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Author

X Zhao; N.P Magtoto; M Leavy; J.A Kelber

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

2002

Language

EN

Field

Engineering (Physical Sciences)