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Improved optical properties of AlGaN using periodic structures by Hideto Miyake; Takeharu Ishii; Atsushi Motogaito; Kazumasa Hiramatsu is a Engineering article available to read on EtoBox.
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## Abstract Al~0.4~Ga~0.6~N periodic structures were fabricated on Al~0.4~Ga~0.6~N epilayers grown on AlN/sapphire templates by electron‐beam (EB) lithography and by reactive ion etching (RIE) using chlorine plasma. The effects of etching depth, dot size and lattice constant on the emission intensity were investigated. It was found that for the AlGaN periodic structures with triangular lattice patterns, which have a lattice constant of 300 nm and a dot size of 150 nm, antireflection and enhanced transmission were obtained from the deep‐ultraviolet region to the visible region (240∼700 nm). The emission intensity of the periodic structure also increased to about 3 times that of the structure with a smooth surface. The excellent optical properties of the periodic structure are expected to improve the performance of photo‐detectors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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- Author
- Hideto Miyake; Takeharu Ishii; Atsushi Motogaito; Kazumasa Hiramatsu
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)
- Published
- 2008
- Language
- EN
- Field
- Engineering (Physical Sciences)
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