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Can I read Low energy electron microscopy of indium on Si(0 0 1) surfaces on EtoBox?
Low energy electron microscopy of indium on Si(0 0 1) surfaces by H.A. McKay; R.M. Feenstra is a Physics and Astronomy article available to read on EtoBox.
What is Low energy electron microscopy of indium on Si(0 0 1) surfaces about?
Low energy electron microscopy is used to study the behavior of thin indium films on Si(0 0 1) surfaces from 100 °C up to 700 °C. For temperatures below 150 °C we see inversions in the LEEM dark-field image and LEED 1/2-order spot intensities as indium coverage increases from 0 to 2 ML. For temperatures between 150 and 600 °C we find the formation of a disordered and an ordered ( 4• 3) indium phase on the surface. For temperatures above 500 °C we observe significant rearrangement of the Si(0 0 1) surface due to the presence of indium and etching of the Si(0 0 1) surface by indium at temperatures greater than 650 °C.
Who reads Low energy electron microscopy of indium on Si(0 0 1) surfaces?
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- H.A. McKay; R.M. Feenstra
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0039-6028)
- Published
- 2003
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)