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Piezoelectric properties of epitaxial Pb(Zr,Ti)O3 thin films grown on Si substrates by the sol–gel method by Goon Tan; Sang-Hyo Kweon; Isaku Kanno is a Engineering article available to read on EtoBox.
What is Piezoelectric properties of epitaxial Pb(Zr,Ti)O3 thin films grown on Si substrates by the sol–gel method about?
In this study, we investigated the piezoelectric characteristics of the sol-gel Pb(Zr0.52Ti0.48)O3 (PZT) films deposited on two different types of substrates. Epitaxial PZT piezoelectric thin films were grown on ZrO2-buffered Si substrates, while polycrystalline PZT thin films were grown on conventional Pt/Ti/Si substrates by the sol–gel method. X-ray diffraction measurements revealed a cube-on-cube epitaxy on the buffered Si substrate. The piezoelectric coefficient (e 31, f ) of the epitaxial PZT thin films was investigated by measuring the tip displacement of PZT cantilevers, and the |e 31, f | values were in the range of 8.9–12 C/m2. The voltage dependence of the |e 31, f | values was more constant than that of the polycrystalline sol–gel PZT/Si cantilever. The epitaxial sol–gel PZT films thus exhibited good piezoelectric properties for applications in microelectromechanical systems devices.
Who reads Piezoelectric properties of epitaxial Pb(Zr,Ti)O3 thin films grown on Si substrates by the sol–gel method?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Goon Tan; Sang-Hyo Kweon; Isaku Kanno
- Publisher
- Elsevier BV
- Published
- 2023
- Language
- EN
- Field
- Engineering (Physical Sciences)