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Can I read Solid Source Molecular Beam Epitaxy Growth of 600-Nm-range Quantum Well Laser Diodes on EtoBox?
Solid Source Molecular Beam Epitaxy Growth of 600-Nm-range Quantum Well Laser Diodes by M Toivonen; P Savolainen; S Orsila; V Vilokkinen; M Pessa; P Corvini; F Fang; R.F Nabiev; M Jansen is a Engineering article available to read on EtoBox.
What is Solid Source Molecular Beam Epitaxy Growth of 600-Nm-range Quantum Well Laser Diodes about?
We have studied the growth of 600-nm range strained GaInP/AlGaInP quantum well lasers using solid phosphorous in a valved cracking cell by molecular beam epitaxy. Closely optimized growth conditions for AlGaInP-based materials have been determined. As a result, high-power red laser diodes have been prepared. Output power levels up to 3 W for the 670 nm, 2 W for the 650 nm and 1 W for the 630-nm lasers have been achieved in continuous wave mode. Preliminary life-tests have also been carried out for 670 and 650 nm devices.
Who reads Solid Source Molecular Beam Epitaxy Growth of 600-Nm-range Quantum Well Laser Diodes?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- M Toivonen; P Savolainen; S Orsila; V Vilokkinen; M Pessa; P Corvini; F Fang; R.F Nabiev; M Jansen
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 1999
- Language
- EN
- Field
- Engineering (Physical Sciences)