About this Engineering article
Relaxable damage in hot-carrier stressing of n-MOS transistors-oxide traps in the near interfacial region of the gate oxide by Bourcerie, M.; Doyle, B.S.; Marchetaux, J.-C.; Soret, J.-C.; Boudou, A. is a Engineering article available to read on EtoBox.
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- Author
- Bourcerie, M.; Doyle, B.S.; Marchetaux, J.-C.; Soret, J.-C.; Boudou, A.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 1990
- Field
- Engineering (Physical Sciences)