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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. - 40 V BiCMOS technology with polysilicon emitter structure by Yamada, S.; Yamauchi, T.; Tokuriki, M.; Inayoshi, X. is a scholarly article available to read on EtoBox.

Author
Yamada, S.; Yamauchi, T.; Tokuriki, M.; Inayoshi, X.
Publisher
IEEE
Published
1990
Language
EN

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