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An Explicit Surface Potential Calculation and Compact Current Model For AlGaN GaN HEMTs by abhikushwaha2314 is a document available to read on EtoBox.

What is An Explicit Surface Potential Calculation and Compact Current Model For AlGaN GaN HEMTs about?

This document presents a new compact model for AlGaN/GaN high-electron mobility transistors (HEMTs) that accurately predicts surface potential and current-voltage characteristics, incorporating self-heating effects. The model simplifies calculations and is validated against numerical results, making it suitable for circuit simulations in GaN-based devices. It aims to streamline the design process as GaN technology becomes mainstream in the industry.

Author

abhikushwaha2314

Language

EN