About this Engineering article
Electrical-stress simulation of plasma-damage to submicron metal–oxide–silicon field-effect transistors: Comparison between direct current and alternating current stresses by Trabzon, L. ;Awadelkarim, O. O. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Trabzon, L. ;Awadelkarim, O. O.
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-2101)
- Published
- 1997
- Language
- EN
- Field
- Engineering (Physical Sciences)