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About this Engineering article
Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy by Ahmadi, Elaheh; Koksaldi, Onur S.; Zheng, Xun; Mates, Tom; Oshima, Yuichi; Mishra, Umesh K.; Speck, James S. is a Engineering article available to read on EtoBox.
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- Author
- Ahmadi, Elaheh; Koksaldi, Onur S.; Zheng, Xun; Mates, Tom; Oshima, Yuichi; Mishra, Umesh K.; Speck, James S.
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; Japan Soc of Applied Physics; IOP Publishing (ISSN 1882-0778)
- Published
- 2017
- Field
- Engineering (Physical Sciences)