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About this Engineering article
Postcycling LRS Retention Analysis in HfO2/Hf RRAM 1T1R Device by Chen, Yang Yin; Degraeve, Robin; Govoreanu, Bogdan; Clima, Sergiu; Goux, Ludovic; Fantini, Andrea; Kar, Gouri Sankar; Wouters, Dirk J.; Groeseneken, Guido; Jurczak, Malgorzata is a Engineering article available to read on EtoBox.
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- Author
- Chen, Yang Yin; Degraeve, Robin; Govoreanu, Bogdan; Clima, Sergiu; Goux, Ludovic; Fantini, Andrea; Kar, Gouri Sankar; Wouters, Dirk J.; Groeseneken, Guido; Jurczak, Malgorzata
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2013
- Field
- Engineering (Physical Sciences)