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About this Engineering article
Fundamental narrow MOSFET gate dielectric breakdown behaviors and their impacts on device performance by Chih-Hang Tung; Pey, K.-L.; Tang, L.J.; Cao, Y.; Radhakrishnan, M.K.; Lin, W.H. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Chih-Hang Tung; Pey, K.-L.; Tang, L.J.; Cao, Y.; Radhakrishnan, M.K.; Lin, W.H.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2005
- Language
- EN
- Field
- Engineering (Physical Sciences)
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