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About this Engineering article
Net positive-charge buildup in various MOS insulators due to high-field stressing by Patrikar, R.M. ;Lal, R. ;Vasi, J. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Patrikar, R.M. ;Lal, R. ;Vasi, J.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 1993
- Language
- EN
- Field
- Engineering (Physical Sciences)